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TPC8030 Dataheets PDF



Part Number TPC8030
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Field Effect Transistor
Datasheet TPC8030 DatasheetTPC8030 Datasheet (PDF)

TPC8030 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8030 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 2.

  TPC8030   TPC8030


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