TPC8036-H

TPC8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8036-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 13 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 64 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 18 72 1.9 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1B Pulsed (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation W Weight: 0.085 g (typ.) Drain power dissipation 1.0 W www.DataSheet4U.com Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Circuit Configuration 211 18 0.13 150 −55 to 150 mJ 8 7 6 5 A mJ °C °C 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if th...