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MMIC AMPLIFIER. TMD7185-2 Datasheet

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MMIC AMPLIFIER. TMD7185-2 Datasheet






TMD7185-2 AMPLIFIER. Datasheet pdf. Equivalent




TMD7185-2 AMPLIFIER. Datasheet pdf. Equivalent





Part

TMD7185-2

Description

MICROWAVE POWER MMIC AMPLIFIER



Feature


MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD7185- 2 FEATURES n HIGH POWER P1dB=33.0dBm a t 7.1GHz to 8.5GHz n HIGH GAIN G1dB=28. 0dB at 7.1GHz to 8.5GHz n BROAD BAND IN TERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply V oltage Gate Supply Voltage Input Power Flange Temperature .
Manufacture

Toshiba Semiconductor

Datasheet
Download TMD7185-2 Datasheet


Toshiba Semiconductor TMD7185-2

TMD7185-2; Storage Temperature SYMBOL VDD VGG Pin T f Tstg UNIT V V dBm °C °C RATING 15 - 10 10 -30 ∼ +80 -65 ∼ +175 RF PERF ORMANCE SPECIFICATIONS ( Ta= 25°C ) CH ARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gai n Compression www.DataSheet4U.com Drain Current Input VSWR 3rd Order Intermodu lation Distortion Point IDD VSWRin IM3 Po (S.C.L.)=22.0 dBm G1dB.


Toshiba Semiconductor TMD7185-2

SYMBOL P1dB VDD= 10V VGG= -5V dB A  dBc 27.0   -42 28.0 1.4  -45 1.7 3.0  CONDITIONS UNIT dBm MIN. 32.0 TYP. MAX. 33.0  f = 7.1 – 8 .5GHz uThe information contained herei n is presented only as a guide for the applications of our products. No respon sibility is assumed by TOSHIBA for any infringements of patents or other right s of the third parties which may r.


Toshiba Semiconductor TMD7185-2

esults from its use, No license is grant ed by implication or otherwise under an y patent or patent rights of TOSHIBA or others. The information contained here in is subject to change without prior n otice. It is therefor advisable to cont act TOSHIBA before proceeding with desi gn of equipment incorporating this prod uct. Rev. Mar.2006 TMD7185-2 PACKAGE OUTLINE (2-11E1B).

Part

TMD7185-2

Description

MICROWAVE POWER MMIC AMPLIFIER



Feature


MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD7185- 2 FEATURES n HIGH POWER P1dB=33.0dBm a t 7.1GHz to 8.5GHz n HIGH GAIN G1dB=28. 0dB at 7.1GHz to 8.5GHz n BROAD BAND IN TERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply V oltage Gate Supply Voltage Input Power Flange Temperature .
Manufacture

Toshiba Semiconductor

Datasheet
Download TMD7185-2 Datasheet




 TMD7185-2
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER MMIC AMPLIFIER
TMD7185-2
FEATURES
n HIGH POWER
P1dB=33.0dBm at 7.1GHz to 8.5GHz
n HIGH GAIN
G1dB=28.0dB at 7.1GHz to 8.5GHz
n BROAD BAND INTERNALLY MATCHED
n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain Supply Voltage
Gate Supply Voltage
Input Power
Flange Temperature
Storage Temperature
SYMBOL
VDD
VGG
Pin
Tf
Tstg
UNIT
V
V
dBm
°C
°C
RATING
15
-10
10
-30 +80
-65 +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
www.DataSheCeto4Um.cpomression Point
Drain Current
Input VSWR
3rd Order Intermodulation
Distortion
SYMBOL
P1dB
G1dB
CONDITIONS
VDD= 10V
VGG= -5V
UNIT
dBm
dB
IDD f = 7.1 – 8.5GHz
VSWRin
IM3 Po (S.C.L.)=22.0 dBm
A
dBc
MIN. TYP. MAX.
32.0 33.0
27.0 28.0
1.4 1.7
  3.0
-42 -45
uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Mar.2006




 TMD7185-2
TMD7185-2
PACKAGE OUTLINE (2-11E1B)
C2 2.5±0.2
jq
kp
lo
mn
7-R0.4
r
2.0±0.5
11.0 ± 0.2 2.0±0.5
Unit in mm
j: No Connection
k: RF IN
l: No Connection
m: VGG
n: No Connection
o: RF OUT
p: No Connection
q: VDD
r: GND
www.DataSRheEeCt4UO.cMomMENDED BIAS CONFIGURATION
2:RF Input 1-3pF
50Matching
TMD7185-2
8: VDD
3pF 1,000pF 10-50µF
1-3pF
6:RF Output
50Matching
4 : VGG
10-50µF 1,000pF
3pF
GND : Base Plate
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°C. Flanges of devices should be attached using screws and washers. Recommended
torque is 0.18-0.20 N·m.
2







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