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HMC849LP4CE

Hittite Microwave Corporation

HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH

HMC849LP4CE v00.0909 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications The HMC849LP4CE is ide...


Hittite Microwave Corporation

HMC849LP4CE

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Description
HMC849LP4CE v00.0909 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications The HMC849LP4CE is ideal for: Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment Features High Isolation: up to 60 dB Single Positive Control: 0/+3V to +5V High Input IP3: +52 dBm Non-Reflective Design “All Off” State 24 Lead 4x4 mm QFN Package: 16 mm2 Functional Diagram General Description The HMC849LP4CE is a high isolation non-reflective DC to 6 GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 5 - 6 GHz WiMAX band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+3V or 0/+5V at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state. 11 SWITCHES - SPDT - SMT www.DataSheet4U.com Electrical Specifi cations, TA = +25 °C, Vctl = 0/Vdd, Vdd = +3V to +5V, 50 Ohm System Parameter Insertion Loss Frequency DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz DC - 4.0 GHz 4.0 - 6.0 GHz DC - 6.0 GHz +3V +5V 0.35 - 4.0 GHz DC - 6.0 GHz 29 34 53 48 40 Min. Typ. 0.8 1.0 1.7 60 55 52 17 13 15 30 35 52 Max. 1.3 1.5 2.5 Units dB dB dB dB dB dB dB dBm dBm dBm ...




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