BLL6H1214L-250

BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 01 — 11 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 250 Gp (dB) 17 ηD (%) 55 tr (ns) 15 tf (ns) 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features „ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: ‹ Output power = 250 W ‹ Power gain = 17 dB ‹ Efficiency = 55 % „ Easy power control „ Integrated ESD protection „ High flexibility with respect to pulse formats „ Excellent ruggedness „ High efficiency „ Excellent thermal stability „ Designed for broadband operation (1.2 GHz to 1.4 GHz) „ Internally matched for ease of use „ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) www.DataSheet4U.com NXP Semiconductors BLL6H1214L(S)-250 LDMOS L-band radar power transistor 1.3 Applications „ L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate s...