PMN27UN

PMN27UN TrenchMOS™ ultra low level FET M3D302 Rev. 01 — 27 September 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN27UN in SOT457 (TSOP6). 2. Features s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package. 3. Applications s s s s Battery powered motor control Load switch in notebook computers High speed switch in set top box power supplies Driver FET in DC to DC converters. 4. Pinning information www.DataSheet4U.com Table 1: Pin 1,2,5,6 3 4 Pinning - SOT457 (TSOP6), simplified outline and symbol Description drain (d) gate (g) source (s) 1 Top view 2 3 MBK092 Simplified outline 6 5 4 Symbol d g s MBB076 SOT457 (TSOP6) Philips Semiconductors PMN27UN TrenchMOS™ ultra low level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 150 °C Tsp = 25 °C; VGS = 4.5 V Tsp = 25 °C VGS = 4.5 V; ID = 2 A; Tj = 25 °C VGS = 2.5 V; ID = 2 A; Tj = 25 °C VGS = 1.8 V; ID = 1.5 A; Tj = 25 °C Typ 27 32 39 Max 20 5.7 1.75 150 34 40 56 Unit V A W °C mΩ mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj drain-source voltage (DC) gate-source ...