MWI75-12E8

MWI 75-12 E8 MKI 75-12 E8 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA IC25 = 130 A VCES = 1200 V VCE(sat) typ. = 2.0 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13, 21 1 2 3 4 14, 20 59 6 10 7 11 8 12 MWI 13, 21 1 2 19 17 15 3 4 14, 20 9 10 11 12 MKI 19 15 Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 15 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH V CE = 900 V; VGE = ±15 V; R G = 15 Ω; TVJ = 125°C SCSOA; non-repetitive 130 90 150 VCES 10 A A A µs TC = 25°C 500 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 3 mA; V = V C GE CE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 75 A V GE = ±15 V; R G = 15 Ω 2.0 2.5 V 2.2 V 4.5 6.5 V 1.1 mA 1.1 mA 400 nA 150 ns 60 ns 680 ns 50 ns 9 mJ 7.5 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 100 A (per IGBT) 5.7 nF 0.58 µC 0.25 K/W E72873 See outline drawing for pin arrangement Features NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits HiPerFREDTM diode: - fast reverse recovery - low op...