WTK4435

WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT -8 AMPERES DRAIN SOURCE VOLTAGE D G 4 5 D 1 2 3 S S S 8 7 6 D D Features: -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<20mΩ@VGS = -10V * RDS(ON)<35mΩ@VGS = -4.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching 1 SOP-8 Description: The WTK4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-e ectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating www.DataSheet4U.com Drain-Source Voltage Symbol VDS VGS (TA =25°C) (TA =70°C) ID IDM (TA =25°C) PD R θJA TJ Tstg Value -30 ±20 -8 -6 -50 2.5 50 +150 -55 to +150 Unite V V A A W °C/W °C °C Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (1) Power Dissipation Maximax Junction-to-Ambient Operating Junction Temperature Range Storage Temperature Range Device Marking WTK4435=4435SC WEITRON http://www.weitron.com.tw 1/6 03-May-07 WTK4435 Electrical Characteristics Characteristic (TA =25°C U nless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ - Max -3.0 ±100 -1 -5 20 35 Unit V V nA μA Static Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leaka...