TS862C12R

TS862C12R Major characteristics VRRM VF IO 120 0.88 10 V V A (10A) (120V / 10A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 0.9 ±0.3 10 +0.5 Characteristics TS862C12R Units Condition Tc=25°C MAX. 1.2 ±0.2 5.08 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 0.8 —0.1 2.7 +0.2 0.4 +0.2 1. Gate 2, 4. Drain 3. Source Features Low VF High Voltage Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : T-pack Epoxy resin UL : V-0 Connection diagram Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C Unless otherwise specified ) Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Average output current www.DataSheet4U.com 1 2 3 Symbol VRSM VRRM Io IFSM Tj Tstg Conditions tw=500ns, duty=1/40 Rating 120 120 Unit V V A A °C °C Square wave, duty=1/2 Tc=137°C Sine wave 10ms 1shot 10 * 75 +150 -40 to +150 Non-repetitive surge current ** Operating junction temperature Storage temperature * Out put current of center tap full wave connection **Rating per element Electrical characteristics (at Tc=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IFM=10A VR=VRRM Junction to case Max. 0.88 150 3.0 Unit V µA °C/W Mechanical characteristics Approximate mass 2 g 3.0 ±0.3 (120V / 10A ) Characteristics TS862C12R (10A) Forward Characteristic (typ.) 10 1 Reverse Characteristic (typ.) Tj=150°C Tj=125°C...