Composite Transistors
XP02501 (XP2501)
Silicon NPN epitaxial planar type
(0.425)
Unit: mm
0.12+0.05 –0.02
For general...
Composite
Transistors
XP02501 (XP2501)
Silicon
NPN epitaxial planar type
(0.425)
Unit: mm
0.12+0.05 –0.02
For general amplification ■ Features
Two elements incorporated into one package (Base-coupled
transistors) Reduction of the mounting area and assembly cost by one half
0.20±0.05 5 4
1.25±0.10 2.1±0.1
1
2
3
(0.65) (0.65) 1.3±0.1 2.0±0.1 10˚
■ Basic Part Number
2SD0601A (2SD601A) × 2
0.9±0.1
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC ICP PT Tj Tstg
60 50 7 100 200 150 150 −55 to +150
V V V mA mA mW °C °C
1: Emitter (Tr1) 2: Base 3: Emitter (Tr2) EIAJ: SC-88A
0 to 0.1
Parameter
Symbol
Rating
Unit
0.9+0.2 –0.1
■ Absolute Maximum Ratings Ta = 25°C
4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package
Marking Symbol: 5W Internal Connection
5 4
Tr1
5˚
Tr2
1
2
3
■ Electrical Characteristics Ta = 25°C ± 3°C
www.DataSheet4U.com Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE(Small/
Larg...