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KFG1216U2M Dataheets PDF



Part Number KFG1216U2M
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description FLASH MEMORY
Datasheet KFG1216U2M DatasheetKFG1216U2M Datasheet (PDF)

OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No. KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) 1.8V(1.7V~1.95V) Temperature Extended Extended Industrial Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) N/A www.DataSheet4U.com Version: Ver. 1.4 Date: June 15th, 2005 1 OneNAND512/OneNAND1GDDP FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, .

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OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density 512Mb Part No. KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB 1Gb KFH1G16Q2M-DEB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) 1.8V(1.7V~1.95V) Temperature Extended Extended Industrial Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) N/A www.DataSheet4U.com Version: Ver. 1.4 Date: June 15th, 2005 1 OneNAND512/OneNAND1GDDP FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED www.DataSheet4U.com ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. OneNAND™‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed as the property of their rightful owners. Copyright © 2005, Samsung Electronics Company, Ltd 2 OneNAND512/OneNAND1GDDP Document Title OneNAND FLASH MEMORY Revision History Revision No. History 0.0 0.0.1 Initial issue. Draft Date Jan. 07, 2004 Remark Preliminary Preliminary 1. Add the "Invalid block management" and "Error management in read and Jan. 29, 2004 write operation" 2. Add the restriction in addressing for program operation. 3. Add the asynchronous write and latched asynchronous write mode timing diagram. 4.Define new parameters in asynchronous write mode. -tCH1 : 10ns, tCH2 : 0ns 1. Add the dual operation diagram. 2. Add the block replacement diagram 1. Edit the block replacement diagram 2. Add the 3.3V product. 1. Excluded Cache Program Operation 2. Added the descriptions for below operations -. Reset -. Write Protection -. Burst Read Latency -. Dual Operation -. Invalid block definition and Identification method -. Error in write or read operation -. ECC 3. Revised program sequence 4. Some AC parameters are changed. tACH : 9ns-->7ns, tCES : 7ns-->9ns, tAAVDS : 5ns-->7ns tDS : 30ns-->10ns, tDH : 0ns-->4ns 5. Define new AC parameter. tAWES(Address hold time in AVD low case of asynchronous write mode) Min. 0ns 1. Correct an errata Ball pitch of package is corrected. 0.5mm --> 0.8mm 2. Edit the timing diagram of burst read wrap around.(Figure 23,24) Jan. 30, 2004 0.0.2 Preliminary 0.0.3 Feb. 03, 2004 Preliminary 0.1 Feb.11, 2004 Preliminary www.DataSheet4U.com 0.1.1 Mar.9, 2004 Preliminary 0.2 0.3 1. The specification of 2.7V device is added. 1. The specification of 3.3V device is deleted. 2. Correct some typos. Mar. 22, 2004 Mar. 31, 2004 Preliminary Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 3 OneNAND512/OneNAND1GDDP Document Title OneNAND FLASH MEMORY Revision History Revision No. History 0.4 1. Corrected the errata 2. Added spare assignment information in detail 3. Added NAND array memory map 4. Added manufacturer ID for CS as 00ECh 5. Added stepping ID for CS in version ID register 6. Divided default status of interrupt status register by Warm,Hot reset and Cold reset 7. Revised Load operation flow chart 8. Revised Program operation flow chart 9. Deleted DBS setting step in Copy-back operation 10. Added OTP description 11. Revised OTP Load and Program flow chart 12. Added INT guidance 13. ECC description is revised 14. Added Data Protection Scheme during Power-down 15. Added DC/AC parameters Draft Date June 22, 2004 Remark Preliminary 1.0 www.DataSheet4U.com 1. Deleted 2.7V product August 5, 2004 2. Added 2.65V product 3. Added 3.3V product and industrial temperature in 3.3V product 4. Deleted Unlock/Lock BootRAM command 5. Added DBS setting step in Copy-back operation 6. Added 2.65V/3.3V DC parameters 7. Revised tCES from 9ns to 7ns 8. Deleted tOEH in asynchronous read operation 9. Revised NOP from 4 times per each main and spare in a page to 2 times per sector 10. Revised Write Protection status description 11. Added DDP selection and operation guidance 12. Added 1Gb DDP device ID 13. Added INT bit status in Cold Reset operation 14. Moved Interrupt register setting before inputting command in all flow charts 15. Revised Dual operation diagrams 16. Added and revised the asynchronous read operation timing diagram 17. Revi.


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