F16JZ51

SF16GZ51,SF16JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF16GZ51,SF16JZ51 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current l Isolation Voltage : IT (AV) = 16A : VIsol = 1500V AC Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non−Repetitive <5ms, Tj = 0~125°C) SF16GZ51 SF16JZ51 SF16GZ51 VRSM SF16JZ51 IT(AV) IT(RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg VIsol 2 SYMBOL VDRM VRRM RATING 400 UNIT V 600 500 V 720 16 25 250 (50Hz) 275 (60Hz) 312 100 5 0.5 10 −5 2 −40~125 −40~125 1500 A A A A s A / µs W W V V A °C °C V 2 Average On−State Current (Half Sine Waveform) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Curret (Note) Peak Gate Power Dissipation Average Gate Power Dissipation www.DataSheet4U.com Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) 2 JEDEC JEITA TOSHIBA Weight: 5.9g ― ― 13−16A1B Note : di / dt Test Condition, iG = 30mA, tgw = 10µs, tgr ≤ 250ns 1 2001-07-13 SF16GZ51,SF16JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage ...