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CG6257AM Dataheets PDF



Part Number CG6257AM
Manufacturers Weida Semiconductor
Logo Weida Semiconductor
Description 4Mb (256K x 16) Pseudo Static RAM
Datasheet CG6257AM DatasheetCG6257AM Datasheet (PDF)

PRELIMINARY CG6257AM 4Mb (256K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active power — Typical active current: 2.0mA @ f = 1 MHz • • • • — Typical active current: 13mA @ f = fmax Ultra low standby power Automatic power-down when deselected CMOS for optimum speed/power Offered in a 48 Ball BGA Package when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state wh.

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PRELIMINARY CG6257AM 4Mb (256K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active power — Typical active current: 2.0mA @ f = 1 MHz • • • • — Typical active current: 13mA @ f = fmax Ultra low standby power Automatic power-down when deselected CMOS for optimum speed/power Offered in a 48 Ball BGA Package when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH ), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). The addresses must not be toggled once the read is started on the device. Writing to the device is accomplished by taking Chip Enables (CE LOW ) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17). Reading from the device is accomplished by taking Chip Enables (CE LOW) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this datasheet for a complete description of read and write modes Functional Description[1] The CG6257AM is a high-performance CMOS Pseudo static RAM organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life® (MoBL) in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption by more than 99% The device can also be put into standby mode Logic Block Diagram DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER www.DataSheet4U.com 256K × 16 RAM Array SENSE AMPS I/O0 – I/O7 I/O8 – I/O15 COLUMN DECODER BHE WE OE BLE A11 A12 A13 A14 A15 A16 A17 CE Power- Down Circuit BHE BLE CE Note: 1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. Weida Semiconductor, Inc. 38-XXXXX Revised August 2003 PRELIMINARY Pin Configuration[2, 3, 4] FBGA Top View 1 BLE I/O8 I/O9 VSS VCC I/O14 I/O15 NC/ A18 2 OE BHE I/O10 I/O11 3 A0 A3 A5 A17 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 NC I/O0 I/O2 Vcc Vss I/O6 I/O7 NC/ A20 A B C D E F G H CG6257AM I/O12 GND I/O13 NC/ A19 A8 A14 A12 A9 Note: 2. DNU pins have to be left floating. 3. Ball H1, G2 and ball H6 for the FBGA package can be used to upgrade to a 8M, 16M and a 32M density respectively. 4. NC “no connect” - not connected internally to the die. www.DataSheet4U.com 38-XXXXX Page - 2 - of 12 PRELIMINARY Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................–65°C to + 150°C Ambient Temperature with Power Applied............................................ –55°C to + 125°C Supply Voltage to Ground Potential................. –0.4V to 4.6V CG6257AM DC Voltage Applied to Outputs in High Z State[5, 6, 7] ........................................–0.4V to 3.3V DC Input Voltage[5, 6, 7].....................................–0.4V to 3.3V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current .....................................................>200 mA Operating Range[9] Device CG6257AM Range Industrial Ambient Temperature –25°C to +85°C VCC 2.70V to 3.30V Product Portfolio Power Dissipation Product Min. CG6257AM 2.70 VCC Range (V) Typ.[8] 3.0 Max. 3.30 70 Speed (ns) Typ.[8] 2 Operating ICC(mA) f = 1MHz Max. 4 f = fmax Typ.[8] 13 Max. 17 Standby ISB2(µA) Typ.[8] 55 Max. 80 Notes: 5. VIL(MIN) = -0.5V for pulse durations less than 20ns. 6. VIH(Max) = Vcc + 0.5V for pulse durations less than 20ns. 7. Overshoot and undershoot specifications are characterized and are not 100% tested. 8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C. 9. Vcc must be at minimal operational levels before inputs are turned ON. www.DataSheet4U.com 38-XXXXX Page - 3 - of 12 PRELIMINARY Electrical Characteristics Over the Operating Range CG6257AM CG6257AM-70 Parameter VCC VOH VOL VIH VIL IIX IOZ ICC Description Supplay Voltage Output HIGH Voltage IOH = –1.0 mA Output LOW Voltage IOL = 2.0mA Input HIGH Voltage Input LOW Volta.


EMK32 CG6257AM CG6258AM


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