N-Channel Enhancement Mode Power MosFET
SMG1332E
Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Pro...
Description
SMG1332E
Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMG1332E provide the designer with best combination of fast swirching, low on-resistance and cost-effectiveness.
S
2
A L
3 Top View
SC-59 Dim A
B
1
Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40
Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80
B C D G H J
K
D
Features
* Simple Gate Drive * 2KV ESD Rating (Per MIL-STD-883D) * Small Package Outline
H
G C J
K L S
Drain Gate Source
All Dimension in mm
D
G
S
Absolute Maximum www.DataSheet4U.com
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,2 3 3
Ratings
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Parameter
Ratings
20
±5 600 470 2.5 1.0 0.008
Unit
V V mA mA A W
W / oC
o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max. Rthj-a
Ratings
125
Unit
o
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jan-2006 Rev. B
Page 1 of 4
SMG1332E
Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Dra...
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