SMG1333

SMG1333 -550mA, -20V,RDS(ON) 800m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description The SMG1333 provide the designer with the best combination of fast switching, low on-resistance S 2 L 3 Top View B 1 B C D and cost-effectiveness. D G H C J K Features * Simple Gate Drive * Small package outline * Fast switching speed H G J K L Drain Gate Source S D Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System All Dimension in mm G Marking : 1333 S Absolute Maximum Ratings Parameter Drain-Source Voltage Sate-Source Voltage www.DataSheet4U.com Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 Symbol VDS VGS Ratings -20 ±12 Unit V V mA mA A W W/ C o o 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o -550 -440 -2.5 1 0.008 3 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 125 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG1333 Elektronische Bauelemente -550mA, -20V,RDS(ON) 800m£[ P-Channel Enhancement Mode Power Mos.FET Electrical...