SMG138K

SMG138K 640mA, 50V,RDS(ON) 2£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description The SMG138K utilized advanced processing techniques to achieve the lowest possible on-resistance extremely efficient and cost-effectiveness device. S 2 L 3 Top View B 1 B C D The SMG138K is universally used for all commercial industrial application D G C H Drain Gate Source G H J K J K L S Features * Simple drive Requirement * Small package outline D All Dimension in mm * RoHS Compliant Product G Marking : 138E S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com 3 Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1,2 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 50 ±20 640 500 950 1.38 0.01 Unit V V mA mA mA W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG138 K Elektronische Bauelemente 640mA, 50V,R DS(ON) 2£[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) ...