Preliminary
Product Description
The SLD2083CZ is a 10 Watt high performance LDMOS transistor designed for operation to ...
Preliminary
Product Description
The SLD2083CZ is a 10 Watt high performance LDMOS
transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD2083CZ is typically used in the design of driver stages for power amplifiers, repeaters, and RFID applications. The power
transistor is fabricated using Sirenza’s high performance XeMOS IITM process.
Functional Schematic Diagram
SLD2083CZ
Pb
RoHS Compliant & Green Package
10 Watt Discrete LDMOS Device Ceramic Package
Product Features
ESD Protection
10 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB Typical High Efficiency Advanced, XeMOS II LDMOS Integrated ESD Protection, Class 1A
Applications
Base Station PA driver Repeater RFID
Case Flange = Ground
RF Specifications
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Parameter Frequency Gain Efficiency IRL
Description: Test Conditions in Sirenza Evaluation Board VDS = 28.0V, IDQ = 125mA, TFlange = 25ºC Frequency of Operation 10 Watt CW, 902MHz-928MHz Drain Efficiency at 10 Watt CW, 915MHz Input Return Loss, 10 Watt Output Power, 915MHz 3rd Order IMD at 10 Watt PEP (Two Tone), 915MHz 1dB Compression (P1dB), 915MHz ACPR=-55dB, IS-95 ACPR=-45dB, IS-95
Unit MHz dB % dB dBc Watt Watt Watt
Min 17 40 10 1.8 3.2
Typ 18 47 -15 -28 11 1.6 3.6
Max 2700 -10 -26 -
Linearity
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no respon...