J599 Datasheet: 2SJ599





J599 2SJ599 Datasheet

Part Number J599
Description 2SJ599
Manufacture NEC
Total Page 4 Pages
PDF Download Download J599 Datasheet PDF

Features: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTI ON The 2SJ599 is P-channel MOS Field Ef fect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORM ATION PART NUMBER 2SJ599 PACKAGE TO-251 TO-252 FEATURES • Low on-state resi stance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 m Ω MAX. (VGS = –4.0 V, ID = –10 A) • Low Ciss: Ciss = 1300 pF TYP. • Built-in gate protection diode • TO-2 51/TO-252 package 2SJ599-Z ABSOLUTE M AXIMUM RATINGS (TA = 25°C) Drain to So urce Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Not e1 (TO-251) –60 + 20 + 20 + 50 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg V V A A W W °C °C A mJ (TO-252) Tota l Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature www.DataSheet4U.com Storage Temperature 35 1.0 150 –55 to +150 –20 40 Single Avalanche Current Single Avalanche Ener.

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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance:
RDS(on)1 = 75 mMAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 111 mMAX. (VGS = –4.0 V, ID = –10 A)
Low Ciss: Ciss = 1300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ599
TO-251
2SJ599-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
VGSS
+20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
+20
+50
Total Power Dissipation (TC = 25°C) PT 35
Total Power Dissipation (TA = 25°C)
PT 1.0
Channel Temperature
www.DataSSthoereatg4Ue .Tcoemmperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tch 150
Tstg –55 to +150
IAS –20
EAS 40
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, RG = 25 , VGS = –20 V ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14644EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
©
2000

           






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