MAZMxxxH

ESD Diodes MAZMxxxH Series Silicon planar type 1.60±0.05 Unit: mm 0.55±0.05 For surge absorption circuit 1.60±0.05 1.20±0.05 1.00±0.05 5 4 1.20±0.05 1.60±0.05 ■ Features Four elements anode-common type Power dissipation PD : 150 mW 1 2 3 5° 0.10±0.03 0.20±0.05 Power dissipation * PD Tj Tstg 150 150 −55 to +150 mW °C °C Junction temperature Storage temperature Note) *: PD = 150 mW achieved with a printed circuit board. 1 : Cathode 1 4 : Cathode 3 2 : Anode 1, 2, 3, 4 5 : Cathode 4 3 : Cathode 2 SSMini5-F1 Package Internally connected circuit 5 4 1 0 ∼ 0.01 Parameter Symbol Rating Unit 2 3 ■ Common Electrical Characteristics Ta = 25°C ± 3°C Parameter www.DataSheet4U.com Zener voltage * Symbol VZ RZK RZ IR IZ IZ IZ VR Conditions Specified value Specified value Specified value Specified value Min Typ Max Unit V Ω Ω µA Zener rise operating resistance Zener operating resistance Reverse current Refer to the list of the electrical characteristics within part numbers Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Electrostatic breakdown voltage is ±10 kV Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times) 3. *: The temperature must be controlled 25°C for VZ mesurement. VZ value measured at other temperature must be adjusted to VZ (25°C) VZ guaranted 20 ms after current flow. (0.15) ■ Absolute Maximum Ratings Ta = 25°C 5° Publication date: November 20...