Document
Y62147BV L™
WCMA4016U1X
256K x 16 Static RAM
Features
• Low voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE1 and CE2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected • CMOS for optimum speed/power both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW). Writing to the device is accomplished by taking Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A18). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking Chip Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this datasheet for a complete description of read and write modes.
Functional Description[1]
The WCMA4016U1X is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. This device features advanced circuit design to provide ultra-low active current and standby current. This is ideal for providing more battery life in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or
Logic Block Diagram
1 BLE DATA IN DRIVERS A9 A8 A7 A6 www.DataSheet4U.com A5 A4 A3 A2 A1 A0 ROW DECODER I/O8 I/O9 VSS I/O0 – I/O7 I/O8 – I/O15 VCC
Pin Configurations
FBGA (Top View)
2 OE BHE I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC A B C D E F G H
256K × 16
RAM Array
2048 × 2048
SENSE AMPS
I/O14 I/O13 I/O15 COLUMN DECODER NC BHE WE A10 A11 A12 A13 A14 A15 A16 A17 OE BLE BHE BLE NC A8
CE2 CE1
Pow er Down Circuit
CE2 CE1
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Weida Semiconductor, Inc.
WCMA4016U1X
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ............... –0.5V to +4.6V DC Voltage Applied to Outputs in High Z State[1] ....................................–0.5V to VCC + 0.5V DC Input Voltage[1] .................................... −0.5V to VCC + 0.5V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage........................................... >2100V (per MIL-STD-883, Method 3015) Latch-Up Current.................................................... >200 mA
Operating Range
Device WCMA4016U1X Range Industrial Ambient Temperature –40°C to +85°C VCC 2.7V to 3.6V
Product Portfolio
Power Dissipation (Industrial) VCC Range Product WCMA4016U1X VCC(min.) VCC(typ.) 2.7V 3.0V
[2]
VCC(max.) 3.6V
Power LL
Speed (ns) 70
Operating (ICC) Typ.[2] 7 mA Maximum 15 mA
Standby (ISB2) Typ.[2] 2 µA Maximum 20 µA
Electrical Characteristics Over the Operating Range
WCMA4016U1X Parameter VOH VOL VIH VIL IIX IOZ Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Load Current Output Leakage Current Current GND < VI < VCC GND < VO < VCC, Output Disabled IOUT = 0 mA, f = fMAX = 1/tRC, CMOS Levels VCC = 3.6V Test Conditions IOH = –1.0 mA IOL = 2.1 mA VCC = 2.7V VCC = 2.7V VCC = 3.6V VCC = 2.7V 2.2 –0.5 –1 –1 ±1 +1 7 Min. 2.4 0.4 VCC + 0.5V 0.8 +1 +1 15 Typ.[2] Max. Unit V V V V µA µA mA
ICC VCC Operating Supply www.DataSheet4U.com
IOUT = 0 mA, f = 1 MHz, CMOS Levels ISB1 Automatic CE Power-Down Current— CMOS Inputs CE1 > VCC−0.3V, CE2< 0.3V VIN>VCC–0.3V, VIN<0.3V) f = fMAX (Address and Data Only), f = 0 (OE, WE, BHE and BLE), VCC=3.60V CE1 > VCC – 0.3V or CE2 < 0.3V, VIN > VCC – 0.3V or VIN < 0.3V, f = 0, VCC = 3.60V LL
1 2
2 20
mA µA
ISB2
Automatic CE Power-Down Current— CMOS Inputs
LL
2
20
µA
Notes: 1. VIL(min.) = –2.0V for pulse durations less than 20 ns. 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.
2
WCMA4016U1X
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Capacitance[3]
Parameter CIN COUT Description Input Capacitance Output Capacitance Test Cond.