DatasheetsPDF.com

WCMA4016U4X Dataheets PDF



Part Number WCMA4016U4X
Manufacturers Weida Semiconductor
Logo Weida Semiconductor
Description 256K x 16 Static RAM
Datasheet WCMA4016U4X DatasheetWCMA4016U4X Datasheet (PDF)

A4016U4X WCMA4016U4X 256K x 16 Static RAM Features • Low Voltage range: — 2.7V-3.3V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1MHz • • • • — Typical active current: 7 mA @ f = fmax Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselecte.

  WCMA4016U4X   WCMA4016U4X



Document
A4016U4X WCMA4016U4X 256K x 16 Static RAM Features • Low Voltage range: — 2.7V-3.3V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1MHz • • • • — Typical active current: 7 mA @ f = fmax Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the truth table at the back of this data sheet for a complete description of read and write modes. The WCMA4016U4X is available in a 48-ball FBGA package. Functional Description The WCMA4016U4X is a high-performance CMOS static RAMs organized as 256K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active current. This device is ideal for portable applications such as cellular telephones. The devices also have an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by Logic Block Diagram DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER www.DataSheet4U.com 256K x 16 RAM Array 2048 x 2048 SENSE AMPS I/O0 – I/O7 I/O8 – I/O15 COLUMN DECODER BHE WE CE OE BLE A11 A12 A13 A14 A15 A16 CE Pow er Down Circuit BHE BLE A17 WCMA4016U4X Pin Configuration[1, 2] FBGA (Top View) 4 5 3 A0 A3 A5 A17 A1 A4 A6 A7 A16 A15 A13 A10 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 1 BLE I/O8 I/O9 VSS VCC I/O14 I/O15 NC 2 OE 6 NC I/O0 I/O2 Vcc Vss I/O6 I/O7 NC A B C D E F G H BHE I/O10 I/O11 I/O12 DNU I/O13 NC A8 A14 A12 A9 Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ...–0.5V to Vccmax + 0.5V DC Voltage Applied to Outputs in High Z Stat.


WCMA4016U1X WCMA4016U4X WCMB2016R4X


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)