WCMC2016V1X

ADVANCE INFORMATION General Physical Specification WCMC2016V1X 128K x 16 Pseudo Static RAM DIE Substrate Connection Req.: Ground Wafer Diameter [mm]: 200.00 Die Size [µm]: 4010.74 x 1565.84 Step Size [µm]: 4095.44 x 1650.89 Scribe Size [µm]: 84.70 x 84.94 Pad Count: 64 Pad Size [µm]: 73.6 x 73.6 For product parameters and availability, please refer to the WCMC2016V1X product datasheet available on the Cypress Semiconductor Website (http://www.cypress.com). Mfg Part Number: GC2016V5A Die Part Number: Die Technology: PowerChip 0.165 µm Metal I: 420 nm TiN/AlCu Metal II: 880 nm TiN/Ti/AlCu/TiN Metal III: None Die Passivation: 780nm P-Si3N4 + Polyimide Product Thickness Guide Code XW XW14 XW11 Description Die (25-30 mil) in wafer form. Die (14 mil) in wafer form. Die (11 mil) in wafer form. Min 617 320 252 Nom 685 355 280 Max 754 391 308 Unit µm µm µm www.DataSheet4U.com Weida Semiconductor, Inc. 38-xyxyx Revised August 22, 2001 ADVANCE INFORMATION Bond Pad Locations 64 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 www.DataSheet4U.com WCMC2016V1X 63 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 21 22 23 24 25 26 27 28 29 30 38-xyxyx Page - 2 - of 5 ADVANCE INFORMATION All units in µm. (0,0) is the lower Left hand corner of the die. Bond Pad Coordinates and Signal Descriptions ID 1 2 3 4 5 6 7 8 9 10 11 11 12 13 14 15 16 17 18 19 20 20 20 21 22 www.DataSheet4U.com 23 WCMC2016V1X Pad Name A15 TEST1 A14 TEST2 A13 A1...