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HN2A26FS

Toshiba Semiconductor

Frequency General-Purpose Amplifier Applications


Description
HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package. High voltage: VCEO = −50 V High current: IC = −100 mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE...



Toshiba Semiconductor

HN2A26FS

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