DRF1402F

UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR The DRF1402F is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-89 SMD package. The DRF1402F can be used as a driver device or an output device, depending on the specific application 4 FEATURES o 4.8 Volt operation o P1dB 28 dBm @f=465MHz o Power gain 10 dB @f=465MHz PIN CONFIGURATION APPLICATIONS o Hand-held radio www.DataSheet4U.com equipment in common PIN NO 1 2 3 4 SYMBOL B C E C DESCRIPTION base collector emitter collector emitter class-AB operation in 450 MHz communication band. MAXIMUM RATINGS SYMBOL VCBO VCEO VEBO Ic PT TSTG TJ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ts = 60 ; note 1 CONDITION Open Emitter Open Base Open Collector VALUE 20 8 4 350 1 -65 ~ 150 150 Unit V V V mA W www.tachyonics.co.kr - 1/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITION PT=1W; Ts=60 ;note1 VALUE 55 Unit K/W * Note 1. Ts is temperature at the soldering point of the collector pin. QUICK REFERENCE DATA RF performance at Ts ≤ 60 Mode of Operation CW, class-AB in common emitter test circuit (see Fig 8.) VCE [V] 4.8 PL [mW] 630 GP [dB] 10 [%] f [MHz] 465 C www.DataSheet4U.com www.tachyonics.co.kr - 2/6 - Sep-...