UHF POWER TRANSISTOR
DRF1402F
NPN SiGe RF TRANSISTOR
The DRF1402F is a low cost, NPN medium power SiGe HBT(Hetero-Jun...
UHF POWER
TRANSISTOR
DRF1402F
NPN SiGe RF
TRANSISTOR
The DRF1402F is a low cost,
NPN medium power SiGe HBT(Hetero-Junction Bipolar
Transistor) encapsulated in a plastic SOT-89 SMD package. The DRF1402F can be used as a driver device or an output device, depending on the specific application
4
FEATURES
o 4.8 Volt operation o P1dB 28 dBm @f=465MHz o Power gain 10 dB @f=465MHz PIN CONFIGURATION
APPLICATIONS
o Hand-held radio www.DataSheet4U.com equipment in common
PIN NO 1 2 3 4
SYMBOL B C E C
DESCRIPTION base collector emitter collector
emitter class-AB operation in 450 MHz communication band.
MAXIMUM RATINGS
SYMBOL VCBO VCEO VEBO Ic PT TSTG TJ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ts = 60 ; note 1 CONDITION Open Emitter Open Base Open Collector VALUE 20 8 4 350 1 -65 ~ 150 150 Unit V V V mA W
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UHF POWER
TRANSISTOR
DRF1402F
THERMAL CHARACTERISTICS
SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITION PT=1W; Ts=60 ;note1 VALUE 55 Unit K/W
* Note 1. Ts is temperature at the soldering point of the collector pin.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 Mode of Operation CW, class-AB in common emitter test circuit (see Fig 8.) VCE [V] 4.8 PL [mW] 630 GP [dB] 10 [%]
f [MHz] 465
C
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