2SD649

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage C www.DataSheet4U.com I Collector Current- Continuous w w s c s i . w 1500 1500 5 3 5 35 V V n c . i m e V A ICP Collector Current-Pulse A PC Collector Power Dissipation @ TC≤90℃ W TJ Junction Temperature 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD649 MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A B 7.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V VCB= 750V ; IE= 0 ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 100 μA hFE DC Current Gain IC= 3A; VCE= 10V tf Fall Time tstg Storage Time www.DataSheet4U.com w w w. IC= 3A, IBend= 1A, LB= 20μH n c . i m e s c is 4 1 mA 12 1 μs 13 μs isc Website：www.iscsemi.cn 2 ...