MGV100-22

GaAs Hyperabrupt Varactor Diodes MGV Series Description The MGV series of hyperabrupt varactor diodes feature passivated mesa construction for low leakage and excellent post tuning drift. Available in three constant gamma families of 0.75, 1.0 and 1.25. These diodes will find application in tunable filters and oscillators up to 40 GHz. Optimum performance is obtained using die however packaged devices are available as well diodes screened per MIL-PRF-19500 and MIL-PRF-38534. Features 0 to 22 Volt tuning voltage Tuning ratios up to 10 (typical) Three constant gamma families 0.75, 1.0, and 1.25 Screening per MIL-PRF-19500 and MIL-PRF-35834 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Power Dissipation Chip E28, E28X, & 0805-2 H20, P55 & P55 Operating Temperature www.DataSheet4U.com Chip E28, E28X, & 0805-2 H20, P55 & P55 Storage Temperature Soldering Temperature Chip Packaged 22 V 100 mA 250 mW at TC = 25 °C, derate linearly to zero at TC = +200 °C 50 °C 100 mW at TA = 25 °C, derate linearly to zero at TA = +1 100 mW at TA = 25 °C, derate linearly to zero at TA = +200 °C -65 °C to +200 °C -65 °C to +1 50 °C -65 °C to +200 °C Same as operating temperature. +320 °C for 10 seconds +260 °C peak per JEDEC J-STD-20C Rating Revision Date: 1 1/1 4/05 GaAs Hyperabrupt Varactor Diodes MGV Series, Γ = 0.75±10% Chip Electrical Specifications, TA = 25 °C IR CJ MIN pF 0.25 0.35 0.45 0.63 0.72 0.90 1.08 1.35 1.62 1.80 VBR = 22 V min. Tuning Ratio ...