BUX77ESY BUX77HR
Hi-Rel NPN bipolar transistor 80 V - 5 A
Features
BVCEO IC (max) HFE at 10 V - 150 mA Operating tempera...
BUX77ESY BUX77HR
Hi-Rel
NPN bipolar
transistor 80 V - 5 A
Features
BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range
■ ■ ■ ■ ■
80 V 5A > 70 -65°C to +200°C
2
31
Hi-Rel
NPN bipolar
transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1.
TO-257
Internal schematic diagram
Description
The BUX77HR is a silicon planar epitaxial
NPN transistor in TO-257 package. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-016 specification. In case of conflict between this datasheet and ESCC detailed specification, the www.DataSheet4U.com latter prevails.
Table 1.
Device summary
Package TO-257 TO-257 Lead finish Gold Solder Dip Gold Marking 520301606 520301607 BUX77ESY Type ESCC Flight Engineering model EPPL Yes Packaging Strip pack Strip pack
Order codes BUX77ESYHRB BUX77ESY
January 2010
Doc ID 16970 Rev 1
1/8
www.st.com 8
Electrical ratings
BUX77ESY, BUX77HR
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at TC ≤ 25 °C Storage temperature Max. operating junction temperature Value 100 80 6 5 35 -65 to 200 200 Unit V V V A W °C °C
Figure 2.
Symbol RthJC
Thermal data
Parameter Thermal resistance junction...