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2N5551HR Dataheets PDF



Part Number 2N5551HR
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Hi-Rel NPN bipolar transistor
Datasheet 2N5551HR Datasheet2N5551HR Datasheet (PDF)

2N5551HR Datasheet Rad-Hard 160 V, 0.5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10450 Product status link 2N5551HR Features Vceo IC(max.) 160 V 0.5 A • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max.) 200 °C Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to.

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BUX77ESY 2N5551HR BUX78HR


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