PSMN039-100YS

PSMN039-100YS N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET Rev. 01 — 14 January 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS www.DataSheet4U.com Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 28.1 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω VGS = 10 V; ID = 15 A; VDS = 50 V; see Figure 14 and 15 Typ Max 100 28.1 74 175 42 Unit V A W °C mJ drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter ID Ptot Tj Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 8 23 nC nC NXP Semiconductors PSMN039-100YS N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET Quick reference …continued Conditions VGS = 10 V; ID = 1...