NTB6410AN

NTB6410AN, NTP6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb−Free Devices V(BR)DSS 100 V Unit V V A http://onsemi.com ID MAX (Note 1) 76 A RDS(ON) MAX 13 mW @ 10 V MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 76 54 188 305 −55 to +175 76 500 W A °C A mJ N−Channel D G S 4 4 1 2 3 tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 57.7 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C 1 2 THERMAL RESISTANCE RATINGS www.DataSheet4U.com Parameter Symbol RqJC RqJA Max 0.8 32 Unit °C/W Junction−to−Case (Drain) Steady State Junction−to−Ambient (Note 1) TO−220AB CASE 221A STYLE 5 3 D2PAK CASE 418B STYLE 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu A...