NTP6411AN

NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage − Continuous VGS $20 V Continuous Drain Steady TC = 25°C ID Current RqJC State TC = 100°C 77 A 54 Power Dissipation Steady TC = 25°C PD RqJC State 217 W Pulsed Drain Current tp = 10 ms IDM 285 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C Range +175 Source Current (Body Diode) IS Single Pulse Drain−to−Source Avalanche EAS Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 56 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering TL Purposes, 1/8″ from Case for 10 Seconds 77 A 470 mJ 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) Steady State RqJC 0.69 °C/W Junction−to−Ambient (Note 1) RqJA 33 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). © Semiconductor Components Industries, LLC, 2011 1 March, 2011 − Rev. 1 http://onsemi.com V(...