NTB6412AN

NTB6412AN, NTP6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb−Free Devices V(BR)DSS Unit V V A 100 V http://onsemi.com ID MAX (Note 1) 58 A MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 58 41 167 240 −55 to +175 58 300 W RDS(ON) MAX 18.2 mW @ 10 V N−Channel D G A °C A mJ 1 2 3 TO−220AB CASE 221A STYLE 5 3 D2PAK CASE 418B STYLE 2 4 4 S tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 44.7 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C 1 THERMAL RESISTANCE RATINGS Parameter www.DataSheet4U.com Junction−to−Case (Drain) Steady State Junction−to−Ambient (Note 1) Symbol RqJC RqJA Max 0.9 33 Unit °C/W 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (C...