2SK3918

SMD Type IC MOSFET MOS Field Effect Transistor 2SK3918 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low on-state resistance +0.2 9.70-0.2 +0.1 0.80-0.1 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 5 V drive available +0.15 0.50-0.15 Low Ciss: Ciss = 1300 pF TYP. 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 25 20 48 192 1.0 29 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter www.DataSheet4U.com Drain cut-off current Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Testconditons VDS=25V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=12A VGS=10V,ID=24A VGS=5.0V,ID=12A Min Typ Max 10 100 Unit A nA V S Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 2.5 6 2.5 12 5.9 11 1300 3.0 7.5 22.2 Ciss Coss Crss ton tr toff tf QG QGS QGD VF(S-D) trr Qrr VDD = 20V VGS = 10 V ID =48A IF = 48A, VGS = 0 V IF = 48 A, VGS = 0 V di/dt = 100 A/ ìs ID=24A,VGS(on)=10V...