KTC3532T

SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. KTC3532T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES ᴌAdoption of MBIT Processes. ᴌLarge Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D ᴌUltrasmall Package Facilitates Miniaturization in end Products. ᴌHigh Allowable Power Dissipation. ᴌComplementary to KTA1532T C L G ᴌHigh-Speed Switching. 1 E F G H I J K L H J MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg RATING 20 20 5 1.5 3 300 0.9 150 -55ᴕ150 UNIT V V V A A mA W ᴱ ᴱ J 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) www.DataSheet4U.com CHARACTERISTIC SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=12V, IE=0 VEB=4V, IC=0 IC=10Ọ A, IE=0 IC=1mA, IB=0 IE=10Ọ A, IC=0 IC=750mA, IB=15mA IC=750mA, IB=15mA VCE=2V, IC=100mA VCE=2V, IC=300mA VCB=10V, f=1MHz PW=20µs DC < = 1% IB1 I B2 RB 50Ω VR 220µF 470µF VCC =5V RL MIN. 20 20 5 200 - Collector Cut-off Current Emitter Cut-of...