NTD6414AN

NTD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com ID MAX (Note 1) 32 A V(BR)DSS 100 V RDS(on) MAX 37 mW @ 10 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 32 22 100 117 −55 to +175 32 154 W Unit V V A N−Channel D G A °C A mJ 1 2 4 1 3 S 4 tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 32 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C THERMAL RESISTANCE RATINGS www.DataSheet4U.com Parameter Symbol RqJC RqJA Max 1.5 37 Unit °C/W Junction−to−Case (Drain) Steady State Junction−to−Ambient (Note 1) DPAK CASE 369AA STYLE 2 3 IPAK CASE 369D STYLE 2 2 YWW 64 14ANG 1 Gate 2 Drain 3 Source YWW 64 14ANG 1 Gate 2 Drain 3 Source Publication Order Number: NTD6414AN/D Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses ...