NTD6415AN

NTD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant V(BR)DSS Value 100 $20 23 16 PD IDM TJ, Tstg IS EAS 83 89 −55 to +175 23 79 W A °C G Unit V V A 100 V http://onsemi.com ID MAX (Note 1) 23 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C Symbol VDSS VGS ID RDS(on) MAX 55 mW @ 10 V N−Channel D tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds S A mJ 4 4 TL 260 °C THERMAL RESISTANCE RATINGS Parameter www.DataSheet4U.com Junction−to−Case (Drain) Steady State Junction−to−Ambient (Note 1) Symbol RqJC RqJA Max 1.8 39 Unit °C/W 3 DPAK CASE 369AA STYLE 2 1 2 1 3 IPAK CASE 369D STYLE 2 2 YWW 64 15ANG 1 Gate 2 Drain 3 Source YWW 64 15ANG 1 Gate 2 Drain 3 Source Publication Order Number: NTD6415AN/D Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Ope...