NTD6416AN

NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com ID MAX (Note 1) 17 A V(BR)DSS 100 V RDS(on) MAX 81 mW @ 10 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current Power Dissipation Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 17 11 71 62 −55 to +175 17 43 W Unit V V A N−Channel D G A °C A mJ 1 2 4 1 3 S 4 tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 17 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C THERMAL RESISTANCE RATINGS www.DataSheet4U.com Parameter Symbol RqJC RqJA Max 2.1 40 Unit °C/W Junction−to−Case (Drain) Steady State Junction−to−Ambient (Note 1) DPAK CASE 369AA STYLE 2 3 IPAK CASE 369D STYLE 2 2 YWW 64 16ANG 1 Gate 2 Drain 3 Source YWW 64 16ANG 1 Gate 2 Drain 3 Source Publication Order Number: NTD6416AN/D Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Rec...