NTD4960N

NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features  Low RDS(on) to Minimize Conduction Losses  Low Capacitance to Minimize Driver Losses  Optimized Gate Charge to Minimize Switching Losses  Three Package Variations for Design Flexibility  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications  CPU Power Delivery  DC−DC Converters  Recommended for High Side (Control) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS 20 V TA = 25C ID 11.1 A TA = 85C 8.0 Power Dissipation RqJA (Note 1) TA = 25C PD Continuous Drain TA = 25C ID Current RqJA (Note 2) Steady TA = 85C Power Dissipation State TA = 25C PD RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TC = 25C ID TC = 85C 1.68 W 8.9 A 6.4 1.07 W 55 A 40 Power Dissipation RqJC (Note 1) TC = 25C PD Pulsed Drain Current tp=10ms TA = 25C IDM 35.71 W 137 A Current Limited by Package TA = 25C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt IDmaxPkg TJ, TSTG IS dV/dt 45 −55 to +175 29.7 6 A C A V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 32 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) EAS TL 51.2 mJ 260 C Stresses exceeding Maximum ...