STS8DN3LLH5

STS8DN3LLH5 Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8 STripFET™ V Power MOSFET Features Type STS8DN3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 10 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses SO-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. www.DataSheet4U.com Table 1. Device summary Marking 8DN3LL Package SO-8 Packaging Tape and reel Order code STS8DN3LLH5 January 2010 Doc ID 16967 Rev 1 1/12 www.st.com 12 Contents STS8DN3LLH5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 www.DataSheet4U.com 2/12 Doc ID 16967 Rev 1 STS8DN3LLH5 Electrical ratin...