9D5N20P Datasheet: KHB9D5N20P





9D5N20P KHB9D5N20P Datasheet

Part Number 9D5N20P
Description KHB9D5N20P
Manufacture KEC
Total Page 7 Pages
PDF Download Download 9D5N20P Datasheet PDF

Features: SEMICONDUCTOR TECHNICAL DATA General Des cription KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H P DIM M ILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, suc h as fast switching time, low on resist ance, low gate charge and excellent ava lanche characteristics. It is mainly su itable for electronic ballast and switc h mode power supplies. FEATURES VDSS=2 00V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/- 0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRA IN 3. SOURCE P Q TO-220AB MAXIMUM RA TING (Tc=25 ) RATING KHB9D5N20F A F C CHARACTERISTIC SYMBOL KHB9D5N20F UNI T KHB9D5N20P KHB9D5N20F2 E O DIM B M ILLIMETERS Drain-Source Voltage Gate-S ource Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed.

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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
VDSS=200V, ID=9.5A
Drain-Source ON Resistance
: RDS(ON)=400m @VGS = 10V
Qg(typ.)=18.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB9D5N20P
KHB9D5N20F
UNIT
KHB9D5N20F2
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
30 V
Drain Current
@TC=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
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ID
IDP
EAS
EAR
dv/dt
9.5 9.5*
38 38*
180
8.7
5.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Tc=25
Derate above25
PD
87
0.7
40 W
0.32 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.44
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
3.13 /W
62.5 /W
D
G
2008. 12. 19
S
Revision No : 2
KHB9D5N20P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB9D5N20P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB9D5N20F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB9D5N20F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7

                    






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