SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB9D5N20P/F/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB9D5N20P
A O ...
SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB9D5N20P/F/F2
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KHB9D5N20P
A O C F E G B Q I K M L J D N N H P
DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O
1 2 3
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.
FEATURES
VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V
15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 +
1. GATE 2. DRAIN 3. SOURCE
P Q
TO-220AB
MAXIMUM RATING (Tc=25
)
RATING
KHB9D5N20F
A F C
CHARACTERISTIC
SYMBOL
KHB9D5N20F UNIT KHB9D5N20P KHB9D5N20F2
E
O
DIM
B
MILLIMETERS
Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt www.DataSheet4U.com (Note 3) Drain Power Dissipation Tc=25 Derate above25
VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 87 0.7 9.5 38
200 30 9.5*
V V A 38*
K L
M J
R
180 8.7 5.5 40 0.32 150
mJ mJ V/ns W W/
D N N H
1
2
3
Q
A B C D E F G H J K L M N O Q R
_ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 12.57 + 0.2 _ 0.1 0.5 + 13.0 MAX _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ ...