MW7IC930NBR1

Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation. Driver Application — 900 MHz Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency (1) 920 MHz 940 MHz 960 MHz Gps (dB) 36.6 36.8 36.6 PAE (%) 16.1 16.7 17.3 ACPR (dBc) - 48.0 - 48.7 - 48.6 MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 728 - 768 MHz, 920 - 960 MHz, 3.2 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 30 Watts CW Pout. Typical Pout @ 1 dB Compression Point ] 31 Watts CW, IDQ1 = 40 mA, IDQ2 = 340 mA Driver Application — 700 MHz Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 36.4 36.4 36.4 PAE (%) 16.1 16....