HiPerFRED Epitaxial Diode
DSEC 60-12A
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
IFAV = 2x 30 A VRRM = 1200 V trr = 40 ns...
Description
DSEC 60-12A
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
IFAV = 2x 30 A VRRM = 1200 V trr = 40 ns
TO-247 AD
VRSM V 1200
VRRM V 1200
Type
DSEC 60-12A
A
C
A
A C A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight
Conditions TC = 115°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 11.5 A; L = 180 µH VA = 1.25·VR typ.; f = 10 kHz; repetitive
Maximum Ratings 70 30 200 14 1.2 -55...+175 175 -55...+150 A A A mJ A °C °C °C W Nm g Applications
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Features
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International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TC = 25°C mounting torque typical
165 0.8...1.2 6
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Symbol IR x
Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A; TVJ = 150°C TVJ = 25°C
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Characteristic Values typ. max. 250 1 1.78 2.74 0.9 0.25 mA mA V V K/W K/W ns A
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VF y RthJC RthCH trr IRM
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Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms TVJ = 100°C
40 5.5
Advantages
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Av...
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