MJ11016

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ11016 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A ·Complement to the PNP MJ11015 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 30 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 200 W 200 ℃ Tstg Storage Temperature Range -55~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.87 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ11016 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 0.2A V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 0.3A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 0.2A VBE(sat)-2 Base-E...