MRF8S9100HR3

Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.3 19.1 hD (%) 51.6 52.9 54.1 MRF8S9100HR3 MRF8S9100HSR3 920 - 960 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Typical Pout @ 1 dB Compression Point ] 108 Watts CW Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg. Gps (dB) 19.1 19.1 19.0 hD (%) 43 44 45 SR1 @ 400 kHz (dBc) - 64.1 - 63.6 - 62.8 SR2 @ 600 kHz (dBc) - 74.5 - 74.6 - 75.1 EVM (% rms) 1.8 2.0 2.3 CASE 465- 06, STYLE 1 NI - 780 MRF8S9100HR3 Frequency 920 MHz 940 MHz 960 MHz CASE 465A - 06, STYLE 1 NI - 780S MRF8S9100HSR3 Features Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation RoHS Compliant www.DataSheet4U.com In Tape and Reel. R3 Suffix = 250 Units per 56 mm, ...