MRF8S9170NR3

Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.1 18.9 hD (%) 36.5 36.1 36.0 Output PAR (dB) 6.0 6.1 6.0 ACPR (dBc) - 36.6 - 36.7 - 36.1 MRF8S9170NR3 920 - 960 MHz, 50 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFET Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) Typical Pout @ 1 dB Compression Point ] 177 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1...