MDE6IC7120GNR1

Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev. 0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 35.0 34.4 33.8 PAE (%) 42.0 40.6 39.1 Output PAR (dB) 6.2 6.8 6.9 ACPR (dBc) - 39.0 - 41.3 - 37.3 MDE6IC7120NR1 MDE6IC7120GNR1 728 - 768 MHz, 25 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 104 Watts CW Output Power (2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 120 Watts CW Pout Typical Pout @ 1 dB Compression Point ] 120 Watts CW Features Production Tested in a Symmetrical Doherty Configuration 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters On - Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescen...