MDE6IC9120NR1

Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 32.5 32.0 31.3 PAE (%) 38.4 38.0 37.7 Output PAR (dB) 6.6 6.7 7.0 ACPR (dBc) - 39.0 - 40.4 - 39.6 MDE6IC9120NR1 MDE6IC9120GNR1 920 - 960 MHz, 25 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 120 Watts CW Pout Typical Pout @ 1 dB Compression Point ] 120 Watts CW Features Production Tested in a Symmetrical Doherty Configuration 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters On - Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescen...