TCET1200, TCET1200G
Vishay Semiconductors
Optocoupler, Phototransistor Output
A1 C2
4E 3C
DVE
17197_4
17918_14
DESCRIPTION The TCET1200 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package.
VDE STANDARDS These couplers perform safety functions according to the following equipment standards:
• DIN EN 60747-5-2 (VDE 0884) Optocoupler for electrical safety requirements
• IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS)
• VDE 0804 Telecommunication apparatus and data processing
• IEC 60065 Safety for mains-operated electronic and related household apparatus
FEATURES • High common mode rejection • CTR offered in 5 groups • Low temperature coefficient of CTR • Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Reinforced isolation provides circuit protection against
electrical shock (safety class II) • Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2 (VDE 0884)
AGENCY APPROVALS • UL1577, file no. E52744, double protection • cUL tested to CSA 22.2 bulletin 5A, double protection • BSI IEC 60950; IEC 60065 pending • DIN EN 60747-5-2 (VDE 0884)
DIN EN 60747-5-5 (pending) • FIMKO
ORDERING INFORMATION
T
C
E
T
1
2
0
PART NUMBER
AGENCY CERTIFIED/PACKAGE UL, VDE, BSI, FIMKO
5 mA 50 to 600
DIP-4
TCET1200
DIP-4, 400 mil
TCET1200G
Note • G = leadform 10.16 mm; G is not marked on the body.
40 to 80 TCET1201 TCET1201G
DIP
#
x
PACKAGE OPTION
7.62 mm
CTR (%)
10 mA
63 to 125
100 to 200
TCET1202
TCET1203
TCET1202G
TCET1203G
DIP, 400 mil
10.16 mm
160 to 320 TCET1204 TCET1204G
Document Number: 83501 Rev. 1.7, 02-Nov-10
For technical questions, contact:
[email protected]
www.vishay.com 1
TCET1200, TCET1200G
Vishay Semiconductors Optocoupler, Phototransistor Output
ABSOLUTE MAXIMUM RATINGS (1) (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 μs
IFSM
1.5
A
Power dissipation
Pdiss
70
mW
Junction temperature
Tj
125
°C
OUTPUT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
Collector current Collector peak current
tp/T = 0.5, tp ≤ 10 ms
IC
50
mA
ICM
100
mA
Power dissipation
Pdiss
70
mW
Junction temperature
Tj
125
°C
COUPLER
Isolation test voltage (RMS)
VISO
5000
VRMS
Total power dissipation
Ptot
200
mW
Operating ambient temperature range
Tamb
- 40 to + 100
°C
Storage temperature range Soldering temperature (2)
2 mm from case, t ≤ 10 s
Tstg
- 55 to + 125
°C
Tsld
260
°C
Notes
(1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
1.6
V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
OUTPUT
Collector emitter voltage
IC = 1 mA
VCEO
70
V
Emitter collector voltage
IE = 100 μA
VECO
7
V
Collector emitter cut-off current
VCE = 20 V, IF = 0 A, E=0
ICEO
10
100
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA, RL = 100 Ω
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
0.6
pF
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements.
www.vishay.com 2
For technical questions, contact:
[email protected]
Document Number: 83501 Rev. 1.7, 02-Nov-10
TCET1200, TCET1200G
Optocoupler, Phototransistor Output Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
VCE = 5 V, IF = 5 mA
IC/IF VCE = 5 V, IF = 10 mA
PART TCET1200 TCET1200G TCET1201 TCET1201G TCET1202 TCET1202G TCET1203 TCET1203G TCET1204 TCET1204G
SYMBOL CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR
MIN. 50 40 63 100 160
TYP.
MAX. 600 80 125 200 320
UNIT % % % % % % % % % %
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
TEST.