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TCET1203 Dataheets PDF



Part Number TCET1203
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Optocoupler
Datasheet TCET1203 DatasheetTCET1203 Datasheet (PDF)

TCET1200, TCET1200G Vishay Semiconductors Optocoupler, Phototransistor Output A1 C2 4E 3C DVE 17197_4 17918_14 DESCRIPTION The TCET1200 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-2 (VDE 0884) Optocoupler for electrical safety requirements • IEC 60950/EN 60950 Office machines (applied.

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TCET1200, TCET1200G Vishay Semiconductors Optocoupler, Phototransistor Output A1 C2 4E 3C DVE 17197_4 17918_14 DESCRIPTION The TCET1200 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-2 (VDE 0884) Optocoupler for electrical safety requirements • IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • VDE 0804 Telecommunication apparatus and data processing • IEC 60065 Safety for mains-operated electronic and related household apparatus FEATURES • High common mode rejection • CTR offered in 5 groups • Low temperature coefficient of CTR • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Reinforced isolation provides circuit protection against electrical shock (safety class II) • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2 (VDE 0884) AGENCY APPROVALS • UL1577, file no. E52744, double protection • cUL tested to CSA 22.2 bulletin 5A, double protection • BSI IEC 60950; IEC 60065 pending • DIN EN 60747-5-2 (VDE 0884) DIN EN 60747-5-5 (pending) • FIMKO ORDERING INFORMATION T C E T 1 2 0 PART NUMBER AGENCY CERTIFIED/PACKAGE UL, VDE, BSI, FIMKO 5 mA 50 to 600 DIP-4 TCET1200 DIP-4, 400 mil TCET1200G Note • G = leadform 10.16 mm; G is not marked on the body. 40 to 80 TCET1201 TCET1201G DIP # x PACKAGE OPTION 7.62 mm CTR (%) 10 mA 63 to 125 100 to 200 TCET1202 TCET1203 TCET1202G TCET1203G DIP, 400 mil 10.16 mm 160 to 320 TCET1204 TCET1204G Document Number: 83501 Rev. 1.7, 02-Nov-10 For technical questions, contact: [email protected] www.vishay.com 1 TCET1200, TCET1200G Vishay Semiconductors Optocoupler, Phototransistor Output ABSOLUTE MAXIMUM RATINGS (1) (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp ≤ 10 μs IFSM 1.5 A Power dissipation Pdiss 70 mW Junction temperature Tj 125 °C OUTPUT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms IC 50 mA ICM 100 mA Power dissipation Pdiss 70 mW Junction temperature Tj 125 °C COUPLER Isolation test voltage (RMS) VISO 5000 VRMS Total power dissipation Ptot 200 mW Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Soldering temperature (2) 2 mm from case, t ≤ 10 s Tstg - 55 to + 125 °C Tsld 260 °C Notes (1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF 1.25 1.6 V Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF OUTPUT Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 μA VECO 7 V Collector emitter cut-off current VCE = 20 V, IF = 0 A, E=0 ICEO 10 100 nA COUPLER Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz Coupling capacitance f = 1 MHz Ck 0.6 pF Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83501 Rev. 1.7, 02-Nov-10 TCET1200, TCET1200G Optocoupler, Phototransistor Output Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 5 mA IC/IF VCE = 5 V, IF = 10 mA PART TCET1200 TCET1200G TCET1201 TCET1201G TCET1202 TCET1202G TCET1203 TCET1203G TCET1204 TCET1204G SYMBOL CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR MIN. 50 40 63 100 160 TYP. MAX. 600 80 125 200 320 UNIT % % % % % % % % % % SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST.


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