Medium power transistor (60V, 0.5A)
2SC5868
Features 1) High speed switching.
(Tf : Typ. : 80ns at IC = 500mA) 2) Low ...
Medium power
transistor (60V, 0.5A)
2SC5868
Features 1) High speed switching.
(Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically
(Typ. : 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load
and capacitance load. 4) Complements the 2SA2090
Applications Small signal low frequency amplifier High speed switching
Dimensions (Unit : mm)
TSMT3
2.8 1.6
(3) 0.4
2.9
1.9 0.95 0.95
(1)
0.7 0.85 1.0MAX
0.16 (2)
(1) Base (2) Emitter (3) Collector
0 0.1
0.3 0.6 Each lead has same dimensions
Abbreviated symbol : VS
Structure
NPN Silicon epitaxial planar
transistor
Packaging specifications
Type 2SC5868
Package Code Basic ordering unit (pieces)
Taping TL 3000
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulsed
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Limits 60 60 6 0.5 1.0 500 150
−55 to 150
Unit
V
V
V
A A mW
∗1 ∗2
°C
°C
www.rohm.com ○c 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.03 - Rev.A
2SC5868
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-emitter breakdown voltage BVCEO
Collector-base breakdown voltage BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage VCE (sat)
DC...
